BC856BLT1G
Manufacturer:
On Semiconductor
Mfr.Part #:
BC856BLT1G
Datasheet:
Description:
BJTs SOT-23-3 SMD/SMT PNP 300 mW Collector Base Voltage (VCBO):80 V Collector Emitter Voltage (VCEO):65 V Emitter Base Voltage (VEBO):5 V
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -65 V |
| Length | 2.9 mm |
| Width | 1.3 mm |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Height | 940 µm |
| Packaging | Reel |
| Radiation Hardening | No |
| RoHS | Compliant |
| Polarity | PNP |
| REACH SVHC | No SVHC |
| Contact Plating | Tin |
| Frequency | 100 MHz |
| Number of Elements | 1 |
| Current Rating | -100 mA |
| Max Power Dissipation | 300 mW |
| Power Dissipation | 300 mW |
| Max Collector Current | 100 mA |
| Collector Emitter Breakdown Voltage | 65 V |
| Transition Frequency | 100 MHz |
| Element Configuration | Single |
| Max Frequency | 100 MHz |
| Collector Emitter Voltage (VCEO) | 65 V |
| Max Breakdown Voltage | 65 V |
| Gain Bandwidth Product | 100 MHz |
| Collector Base Voltage (VCBO) | 80 V |
| Collector Emitter Saturation Voltage | -650 mV |
| Emitter Base Voltage (VEBO) | 5 V |
| hFE Min | 220 |
| Schedule B | 8541210080 |
| Max Cutoff Collector Current | 100 mA |
| Transistor Type | PNP |
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